Complementary field effect transistor sense amplifier for one tr

Details Complementary field effect transistor sense amplifier for one tr Complementary field effect transistor sense amplifier for one tr

1975-07-03

1977-01-11

Hecker, Stuart N.

Communications: electrical

Digital comparator systems

340173CA, G11C 706, G11C 1124

Patent

active

040030350

ABSTRACT:
A random access memory includes a plurality of one-transistor storage cells. A plurality of sense-write conductors are included, each connected to a plurality of storage cells in a row of storage cells. A plurality of regenerative sense amplifiers are each coupled to two sense-write conductors. A one-transistor dummy storage cell is connected to each sense-write conductor. Read-write circuitry is coupled between a data conductor of the memory chip and one of the regenerative sense amplifiers for each of the rows, respectively. The dummy storage cell is selected whenever a storage cell on the opposite side of the regenerative sense amplifier is selected after redistribution of charge initially stored in the selected storage cell onto the sense-write conductor takes place. The sense voltage resulting from the charge redistributed on the opposite sense-write conductor is subsequently amplified by the sense amplifier, and provided in inverted and noninverted form on the two respective sense-write conductors. A CMOS transmission gate clocked by a first control signal and its logical complement balances the two sense-write conductors to precisely the same voltage. First and second clocked CMOS inverters are cross-coupled to form a label with its output nodes each coupled, respectively, to one of a pair of the sense-write conductors. The clocking of the latch circuit is performed by a second clock signal and its logical complement delayed somewhat from the first clock signal and its logical complement to effectively electrically isolate the pair of sense-write conductors during the balancing and sensing charge redistribution operations.

REFERENCES:
patent: 3678473 (1972-07-01), Wahlstrom
patent: 3771147 (1973-11-01), Boll et al.
patent: 3806898 (1974-04-01), Askin
patent: 3838295 (1974-09-01), Lindell
patent: 3868656 (1975-02-01), Stein et al.

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