Complementary field effect transistor and method of forming the

Details Complementary field effect transistor and method of forming the Complementary field effect transistor and method of forming the

1987-11-18

1990-04-24

James, Andrew J.

357 42, 357 4, H01L 2972

Patent

active

049203924

ABSTRACT:
There is provided a complementary field effect transistor which includes an insulating substrate having a gate electrode formed thereon, a substantially intrinsic semiconductor thin film covering the insulating substrate such that the gate electrode is formed through the insulating substrate at one side of the intrinsic semiconductor thin film, an island p-type semiconductor thin film and an island n-type semiconductor thin film formed over the intrinsic semiconductor thin film, a first pair of electrodes formed over the p-type semiconductor thin film opposite the gate electrode, and a second pair of electrodes formed over the n-type semiconductor thin film, also, opposite the gate electrode on a same side of the intrinsic semiconductor thin film as the first pair of electrodes. A first electrode of each of the first and second pairs of electrodes are electrically connected with each other to form the complementary field effect transistor.

REFERENCES:
patent: 3378783 (1968-04-01), Gibson
patent: 4686553 (1987-08-01), Possin
Weimer, Paul K., "The TFT-A New Thin-Film Transistor", Proceedings of the IRE, Jun. 1962, pp. 1462-1468.

Affiliated with

Also associated with

Rating

Complementary field effect transistor and method of forming the does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Complementary field effect transistor and method of forming the , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Complementary field effect transistor and method of forming the will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-37163