Complementary DMOS-VMOS integrated circuit structure

Details Complementary DMOS-VMOS integrated circuit structure Complementary DMOS-VMOS integrated circuit structure

1977-07-20

1978-10-10

Wojciechowicz, Edward J.

357 22, 357 41, 357 45, 357 55, H01L 2978

Patent

active

041199960

ABSTRACT:
A high speed CMOS formed on a single semiconductor substrate includes a DMOS having an asymmetric channel and a VMOS with a relatively short channel length. The short channel length of the VMOS is achieved by: (1) forming a double diffusion along one edge of a V groove, or (2) ion implanting boron into the apex of the V groove and diffusing a single layer to a relatively deep depth along both edges of the groove.

REFERENCES:
patent: 3975221 (1976-08-01), Rodgers
patent: 4049476 (1977-09-01), Horie

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