Complementary composite PNP transistor

Details Complementary composite PNP transistor Complementary composite PNP transistor

1989-08-23

1991-02-19

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307491, 307495, H03K 1760

Patent

active

049946943

ABSTRACT:
A complementary composite PNP transistor includes a p-channel JFET and an operational amplifier coupled to form an ideal PNP transistor. The positive input of the operational amplifier forms the base of the composite transistor and the drain of the JFET forms the collector of the composite transistor. The anode of a diode-connected NPN transistor forms the emitter of the composite transistor, while the cathode is coupled to the source of the JFET. The diode-connected transistor provides complementary current-voltage characteristics for the composite PNP transistor since the saturation current and g.sub.m of the composite transistor are equal to that of an NPN transistor.

REFERENCES:
patent: 3531656 (1970-09-01), Ammann
patent: 4480201 (1984-10-01), Jaeschke
patent: 4636665 (1987-01-01), McLaughlin
patent: 4730124 (1988-03-01), Metz
patent: 4866313 (1989-09-01), Tabata et al.
patent: 4868421 (1989-09-01), Herndon et al.
patent: 4902921 (1990-02-01), Hiramoto et al.
patent: 4916338 (1990-04-01), Metz
Soussi, Electron. & Appl. Ind. (France), No. 281, 3-15-80.

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