Complementary bipolar complementary CMOS (CBiCMOS) transmission

Details Complementary bipolar complementary CMOS (CBiCMOS) transmission Complementary bipolar complementary CMOS (CBiCMOS) transmission

1990-09-27

1991-07-02

James, Andrew J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 15, 357 20, 357 34, 357 41, 357 42, 357 44, 307570, 307571, 307575, 307576, 307577, H01L 2702, H01L 2948, H01L 2972

Patent

active

050289780

ABSTRACT:
A CBiCMOS transmission gate in which the sources of a CMOS transistor pair are connected to an input and the drains are connected to the bases of a complementary bipolar transistor pair. The bipolar transistor pair is serially connected between a plus voltage potential and ground whereby a logic one applied to the input is transmitted through the PMOS transistor to the base of an NPN transistor which applies the plus voltage to an output terminal, and a logic zero applied to the input is transmitted to the NMOS transistor to the base of a PNP transistor to apply ground to the output terminal.

REFERENCES:
patent: 4794441 (1988-12-01), Sugawara et al.
patent: 4920399 (1990-04-01), Hall
patent: 4967246 (1990-10-01), Tanaka

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