Compensation technique using MOS capacitance

Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – Utilizing a three or more electrode solid-state device

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

327429, 327434, 257369, 257532, H01G 706

Patent

active

060878967

ABSTRACT:
Two FET transistors provide an electrical circuit characterized by a stable capacitance across a wide range of input voltages and temperture fluctuations. Additionally, the transistors provide a capacitive compensation circuit which stabilizes the output voltage of a band-gap reference circuit. The compensation circuit encompasses the electrical connecting of a PFET capacitor across the terminals of an NFET capacitor (preferably a low threshold voltage NFET), wherein the gate of the of the NFET capacitor is directly connected to an input lead, the substrate is grounded, and the source and drain are directly connected to a common output lead. The PFET is also directly connected to the the input lead and the output lead, however, instead of the substrate being grounded, the substrate of the PFET is electrically connected to the common output lead. This configuration results in a circuit which provides a steady capacitance across a wide range of voltages, and most importantly, during power-up of the reference circuit.

REFERENCES:
patent: 4937476 (1990-06-01), Bazes
patent: 5360989 (1994-11-01), Endo
patent: 5801411 (1998-09-01), Klughart
patent: 5801412 (1998-09-01), Tobita
patent: 5900766 (1999-05-01), Naffziger et al.
patent: 5920221 (1999-07-01), Shen et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Compensation technique using MOS capacitance does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Compensation technique using MOS capacitance, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Compensation technique using MOS capacitance will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-545941

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.