Patent
1978-12-26
1980-12-30
Wojciechowicz, Edward J.
357 34, 357 58, H01L 2356
Patent
active
042426936
ABSTRACT:
In a transistor circuit a linear relationship between V.sub.BE and temperature is obtained by using high base sheet resistivity devices, such as super beta NPN transistors, or lateral PNP transistors. Alternatively, high base sheet resistivity devices are fabricated having a non-linear V.sub.BE vs. temperature relationship that is matched to the non-linear V.sub.BE vs. temperature relationship of NPN devices and/or the non-linear resistivity of diffused resistors over temperature, such that the sum or difference of the non-linear terms will exactly cancel, providing a linear voltage vs. temperature relationship for the circuit as a whole.
REFERENCES:
patent: 3831040 (1974-08-01), Nanba et al.
Fairchild Camera & Instrument Corporation
Meetin Ronald J.
Pollock Michael J.
Winters Paul J.
Wojciechowicz Edward J.
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