Fishing – trapping – and vermin destroying
Patent
1989-09-27
1991-10-15
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437225, 430296, H01L 21312, H01L 2147
Patent
active
050574620
ABSTRACT:
In the manufacture of integrated-circuit devices, patterned features are made on a substrate by etching a deposited layer. The pattern comprises features which are closely spaced, as well as others which are more isolated. Etching is in approximate conformance with a lithographically defined resist pattern which in turn is in approximate conformance with a desired pattern. A processing parameter such as, e.g., resist layer thickness is chosen such that an etched pattern is obtained which approximates a desired pattern more closely than a lithographically defined resist pattern.
REFERENCES:
patent: 4463265 (1984-07-01), Owen
patent: 4610948 (1986-09-01), Glendinning
patent: 4761560 (1988-08-01), Glendinning
patent: 4814244 (1989-03-01), Koguchi
Wolf and Tauber, "Silicon Processing for the VLSI Era" vol. 1, Jun., 1987, pp. 555-564.
"Proximity Effects and Influences of Nonuniform Illumination in Projection Lithography", P. D. Robertson et al., Proceedings of SPIE, vol. 334 (1982), pp. 37-43.
"Variable Proximity Corrections for Submicron Optical Lithographic Masks", Y. Nissan-Cohen et al., Digest of Technical Papers, 1987 Symposium on VLSI Technology, Karuizawa, IEEE, 1987, pp. 13-14.
"Reactive Plasma Etching", R. J. Schutz, Chap. 5 in: VLSI Technology, 2nd. edition, S. M. Sze, ed., McGraw-Hill, New York, 1988.
Eisenberg Juli H.
Fritzinger Larry B.
Fu Chong-Cheng
Kook Taeho
Wolf Thomas M.
AT&T Bell Laboratories
Hearn Brian E.
Holtzman Laura M.
Rehberg John T.
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