Compensation of autodoping in the manufacture of integrated circ

Details Compensation of autodoping in the manufacture of integrated circ Compensation of autodoping in the manufacture of integrated circ

1974-12-24

1976-09-28

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148191, 156610, 156612, 357 48, 357 89, 357 90, H01L 21205, H01L 2122

Patent

active

039829740

ABSTRACT:
A method of making an integrated circuit wherein a subcollector diffusion mask is formed on a semiconductor wafer. A principal impurity of a predetermined conductivity type is then diffused through windows in the mask and into the wafer to form subcollector regions spaced from each other. A compensating impurity of a conductivity type opposite that of the principal impurity is then diffused through the same mask windows into the subcollector regions to a relatively shallow depth. An epitaxial layer is then grown on the wafer during which an amount of the principal impurity diffuses from the subcollector regions into the gas and then into the epitaxial layer and the wafer in areas thereof exterior to the peripheries of the subcollector regions thereby resulting in an autodoping effect. However, the compensating impurity simultaneously diffuses into the exterior areas so as to compensate approximately for the principal impurity and thereby to counteract the autodoping effect of the principal impurity.

REFERENCES:
patent: 3328213 (1967-06-01), Topas
patent: 3404450 (1968-09-01), Karcher
patent: 3660180 (1972-05-01), Wajda
patent: 3716422 (1973-02-01), Ing et al.
Demsky et al., "Technique for Counteracting Epitaxial Autodoping," IBM Tech. Discl. Bull., vol. 13, No. 3, Aug. 1970, p. 807-808.
Runyan, W. R., "Silicon Semiconductor Technology," Textbook, McGraw-Hill, 1965, pp. 69-73.
Jackson, D. M., "Advanced Epitaxial Processes-Applications," Trans. Metall. Soc. of Aime, vol. 233, Mar. 1965, pp. 596-602.
Edel, W. A., "Stacking Fault Free Epitaxial Layers," IBM Tech. Discl. Bull., vol. 14, No. 5, Oct. 1971, p. 1654.

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