Compensation for voltage drifts in analog memory cells

Details Compensation for voltage drifts in analog memory cells Compensation for voltage drifts in analog memory cells

2011-08-16

2011-08-16

Nguyen, Dang T (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C365S185220, C365S185190

Reexamination Certificate

active

08000141

ABSTRACT:
A method for data storage includes storing data in a group of analog memory cells by writing respective first storage values into the memory cells. After storing the data, respective second storage values are read from the memory cells. A subset of the memory cells, in which the respective second storage values have drifted below a minimum readable value, is identified. The memory cells in the subset are operated on, so as to cause the second storage values of at least one of the memory cells in the subset to exceed the minimum readable value. At least the modified second storage values are re-read so as to reconstruct the stored data.

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