Compensation for parasitic coupling between RF or microwave...

Details Compensation for parasitic coupling between RF or microwave... Compensation for parasitic coupling between RF or microwave...

2005-07-05

2009-12-29

Nguyen, Patricia (Department: 2817)

Amplifiers

With semiconductor amplifying device

Including signal feedback means

C330S302000, C330S053000

Reexamination Certificate

active

07639083

ABSTRACT:
Parasitic coupling effects between RF or microwave transistors provided in a common package are compensated by connecting one or more capacitors between the transistors. By connecting the capacitor(s) at a location that corresponds to the site of the coupling, the compensation is effective over a wide frequency band. This coupling-compensation makes it feasible to provide, in a common package, RF or microwave transistors intended to operate in quadrature, thereby improving performance matching and operating efficiency of the overall device.

REFERENCES:
patent: 5066925 (1991-11-01), Freitag et al.
patent: 5159204 (1992-10-01), Bernacchi et al.
patent: 5778303 (1998-07-01), Shinozaki et al.
patent: 6011438 (2000-01-01), Kakuta et al.
patent: 6140873 (2000-10-01), Van Groningen
patent: 6734728 (2004-05-01), Leighton et al.
patent: 6768381 (2004-07-01), Kuriyama
patent: 7368986 (2008-05-01), Pillonnet
patent: 2003/0117219 (2003-06-01), Yamamoto et al.
Takenaka et al; “L/S-band 140 W push-pull power AlGaAs/GaAs HFETs for digital cellular base stations” Gallium Arsenide Integrated Circuit Symposium 1998, pp. 81-85.
Takenaka et al; “A 240 W Doherty GaAs power FET amplifier with high efficiency and low distortion for W-CDMA base stations”; Microwave Symposium Digest 2004, pp. 525-528.

Affiliated with

Also associated with

Rating

Compensation for parasitic coupling between RF or microwave... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Compensation for parasitic coupling between RF or microwave..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Compensation for parasitic coupling between RF or microwave... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4081991