Compensation doping of group III-V materials

Details Compensation doping of group III-V materials Compensation doping of group III-V materials

1985-12-24

1987-08-25

Hearn, Brian E.

Fishing, trapping, and vermin destroying

156610, 156613, 156614, 357 13, 357 15, 357 64, 357 89, C03B 2300, H01L 21205, H01L 21365

Patent

active

046890947

ABSTRACT:
A method of growing an epitaxial doped chromium buffer layer is described. A first flow of arsenic trichloride and hydrogen is directed through a retort having disposed therein at an elevated temperature chromium and gallium arsenide crystals. The arsenic trichloride reacts with the chromium and the gallium arsenic crystals to produce chromium chloride, gallium chloride and arsenic. This vapor stream is then directed into a reactor tube where a second flow of gallium chloride and arsenic is provided. Deposited from these flows is gallium arsenide doped with chromium.

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R. R. Fergusson and T. Gabor, "The Transport of Gallium Arsenide in the Vapor Phase by Chemical Reaction", J. Electrochem. Soc., vol. 111, No. 5, May 1964, pp. 585-592.

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