Compensating semiconductor materials

Details Compensating semiconductor materials Compensating semiconductor materials

1981-01-09

1982-12-28

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

136262, 148 15, 148188, 204 37R, 204 37T, 357 30, 357 59, 357 63, 357 64, H01L 3106, H01L 3118

Patent

active

043663389

ABSTRACT:
A method of compensating grain boundaries or dislocations causing interstices to form particularly in polycrystalline semiconductor materials is disclosed which comprises selectively diffusing opposite impurity-type donor semiconductor material into the interstice to thereby reduce the conductivity of the interstice.

REFERENCES:
patent: 2995475 (1961-08-01), Sharpless
patent: 3340599 (1967-09-01), Ellis
patent: 4078945 (1978-03-01), Gonsiorawski
patent: 4082889 (1978-04-01), Di Stefano
patent: 4197141 (1980-04-01), Bozler et al.
patent: 4249957 (1981-02-01), Koliwad et al.
patent: 4320168 (1982-03-01), Lindmayer
J. W. McPherson et al., "Band Bending & Passivation Studies of GaAs Grain Boundaries", J. Electrochem. Soc., vol. 127, pp. 2713-2721 (1980).
M. H. Brodsky, "Making Higher Efficiency Solar Cells with Polcrystalline Si Films", IBM Tech. Disc. Bull., vol. 18, pp. 582-583 (1975).
G. W. Turner et al., "Efficient Large-Grained GaAs Homojunction Solar Cells", Conf. Record, 14th IEEE Photovoltaic Specialists Conference (1980), pp. 1330-1332.
"Thermal diffusion of tin in GaAs from a spin-on SnO.sub.2 /SiO.sub.2 source" by Nissim et al. in Appl. Phys. Lett 37(1), Jul. 1, 1980.
"Amorphous Silicon Solar Cells" by David E. Carlson in Transactions on Electron Devices, vol. ED-24, No. 4, Apr. 1977.

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