Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-02-13
2007-02-13
Phung, Anh (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185290
Reexamination Certificate
active
11123979
ABSTRACT:
A method for discharge in a flash memory device includes: initiating a discharge of a memory cell after an erase operation; coupling a first discharge circuit to a first plate of a gate-bulk capacitor, and a second discharge circuit to a second plate of the gate-bulk capacitor, where the first plate represents the common gate node of the memory cell and the second plate represents the bulk-source node of the memory cell; and coupling the common gate node and the bulk-source node to ground to provide for a complete discharge. The current injected into the first plate approximately equals the current extracted from the second plate. In this manner, dangerous oscillations of the gate and bulk-source voltages as they go to ground are eliminated without complicated designs or voltage limitators, and without sacrificing the fast discharge after the erase operation. The reliability of the discharge operation is thus significantly improved.
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Bartoli Simone
Bedarida Lorenzo
Manfre′ Davide
Oddone Giorgio
Atmel Corporation
Phung Anh
Sawyer Law Group LLP
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