Image analysis – Histogram processing – For setting a threshold
Patent
1999-04-26
2000-06-27
Teska, Kevin J.
Image analysis
Histogram processing
For setting a threshold
382144, 700110, 700121, 430 30, 430 5, 438 16, G06F 1750, G06F 1900, G06K 903
Patent
active
060816597
ABSTRACT:
A method of simulating a masking process in which a process simulator is used to produce an aerial image. The simulator is configured to receive input information. The input information includes a digital representation of a patterned mask and a data set. Each element of the data set corresponds to one of a plurality of parameters associated with the masking process. The simulator is configured to produce an aerial image based upon the input information. The aerial image represents the simulator estimation of a pattern that would be produced by the masking process using the patterned mask under conditions specified by the data set. The method further includes the step of supplying the input information to the simulator to produce the aerial image. A first data base is then generated from the aerial image. The first data base is a digital representation of the aerial image. Thereafter, the pattern is produced on a semiconductor substrate using the masking process and the patterned mask. The pattern is produced under the conditions specified by the data set. A second data base is then generated wherein the second data base is a digital representation of the actual pattern. The first data base and the second data base are then compared to produce an error data base. The error data base is indicative of differences between the aerial image and the pattern. Thereafter, the process simulator is modified based upon the error data base to minimize the differences between a successive iteration of the aerial image and the pattern.
REFERENCES:
patent: 4812962 (1989-03-01), Witt
patent: 5434102 (1995-07-01), Watanabe et al.
patent: 5553273 (1996-09-01), Liebmann
patent: 5553274 (1996-09-01), Liebmann
patent: 5633713 (1997-05-01), Tanaka et al.
patent: 5681674 (1997-10-01), Fujimoto
patent: 5682323 (1997-10-01), Pasch et al.
patent: 5705301 (1998-01-01), Garza et al.
patent: 5725973 (1998-03-01), Han et al.
patent: 5745388 (1998-04-01), Mimotogi et al.
patent: 5795688 (1998-08-01), Burdorf et al.
patent: 5801954 (1998-09-01), Le et al.
patent: 5862058 (1999-01-01), Samuels et al.
patent: 5879844 (1999-03-01), Yamamoto et al.
Beeck et al., "Optical Proximity Effects and Correction Strategies for Chemical Amplified DUV Resists," SPIE vol. 2726, Mar. 1996, pp. 622-633.
Grassmann et al., "Aerial image studies of an advanced deep-UV exposure system," Microelectronic Engineering, vol. 23, No. 1-4, Jan. 1994, pp. 155-158.
Hanawa et al., "Fast and accurate optical proximity correction based on aerial image simulation," Proceedings of the SPIE--The International Society for Optical Engineering, vol. 2726, Jan. 1996, pp. 640-650.
Bernard et al, "Efficient computational techniques for aerial imaging simulation," Proceedings of the SPIE--The International Society for Optical Engineering, vol. 2726, Jan. 1996, pp. 273-287.
Gehm et al., "Proximity correction methodology using contemporary photolithography and topography simulators," Proceedings of the Microlithography Seminar Interface '97, Jan. 1997, pp. 281-295.
Patent Abstracts of Japan, Pub. No. 04033168, Pub. Date: Feb. 4, 1992, invented by Hiroshi.
Patent Abstracts of Japan, Pub. No. 04063460, Pub. Date: Feb. 28, 1992, invented by Kazuhiro.
Patent Abstracts of Japan, Pub. No. 06083906, Pub. Date: Mar. 25, 1994, invented by Kyosuke.
Patent Abstracts of Japan, Pub. No. 06125007, Pub. Date: May 6, 1994, invented by Akito.
Patent Abstracts of Japan, Pub. No. 07021239, Pub. Date: Jan. 24, 1995, invented by Yasuko.
Patent Abstracts of Japan, Pub. No. 09044535, Pub. Date: Feb. 14, 1997, invented by Kazutaka.
Patent Abstracts of Japan, Pub. No. 09148441, Pub. Date: Jun. 6, 1997, invented by Takashi.
Patent Abstracts of Japan, Pub. No. 09288686, Pub. Date: Nov. 4, 1997, invented by Takeshi.
Henderson et al., "CD data requirements for proximity effect corrections," SPIE vol. 2322, Sep. 14, 1994, pp. 218-228.
Stirniman et al., "Optimizing proximity correction for wafer fabrication processes," SPIE vol. 2322, Sep. 14, 1994, pp. 239-246.
Barouch et al., "Optimask: An OPC Algorithm for Chrome and Phase-Shift Mask Design," SPIE vol. 2440, Feb. 22, 1995, pp. 192-206.
Socha et al., "Effects of Wafer Topography on the Formation of Polysilicon Gates," SPIE vol. 2440, Feb. 22, 1995, pp. 361-371.
Futatsuya et al., "Practical Method of Evaluating Two Dimensional Resist Features for Lithographic DRC," SPIE vol. 3051, Mar. 12, 1995, pp. 499-508.
European Search Report for Application No. 98106429 mailed May 28, 1999.
Grassmann et al. ("Aerial image studies of an advanced deep-UV exposure system", Microelectronic Engineering, vol. 23, No. 1-4, pp. 155-158, Jan. 1, 1994).
Hanawa et al. ("Fast and accurate optical proximity correction based on aerial image simulation", Proceedings of the SPIE--The International Society for Optical Engineering, vol. 2726, pp. 640-650, Jan. 1, 1996).
Bernard et al. ("Efficient computational techniques for aerial imaging simulation", Proceedings of the SPIE--The International Society for Optical Engineering, vol. 2726, pp. 273-287, Jan. 1, 1996).
Gehm et al. ("Proximity correction methodology using contemporary photolithography and topography simulators", Proceedings of the Microlithography Seminar Interface '97 , pp. 281-295, Jan. 1, 1997).
Pati et al. ("Exploiting Structure in Fast Aerial Image Computation for Integrated Circuit Patterns", IEEE Transactions on Semiconductor Manufacturing, vol. 10, No. 1, Feb. 1997, pp. 62-74).
Chao Keith K.
Garza Mario
Kik Phallaka
Kivlin B. Noel
LSI Logic Corporation
Teska Kevin J.
LandOfFree
Comparing aerial image to actual photoresist pattern for masking does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Comparing aerial image to actual photoresist pattern for masking, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Comparing aerial image to actual photoresist pattern for masking will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1791269