Compact voltage biasing circuitry for enhancement of power MOSFE

Details Compact voltage biasing circuitry for enhancement of power MOSFE Compact voltage biasing circuitry for enhancement of power MOSFE

1998-04-28

2000-05-30

Kim, Jung Ho

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Signal transmission integrity or spurious noise override

327589, H03K 1716

Patent

active

060695161

ABSTRACT:
Disclosed is a biasing circuit for bringing a power FET to a substantial full enhancement. The biasing circuit includes: (a) a rail power voltage that is coupled to a drain terminal of the power field effect transistor; (b) a load being coupled between an other potential and a source terminal of the power field effect transistor; and (c) a micromachined DC/DC converter that is coupled between a gate terminal of the power field effect transistor and the rail power voltage. The micromachined DC/DC converter is configured to produce an enhanced voltage that is greater than the rail power voltage to the gate terminal of the power field effect transistor to achieve a substantial enhancement of the power field effect transistor.

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J.M. Noworolski, S.R. Sanders, "An Electrostatic Microresonant Power Conversion Device", Dept. of Electrical Eng. And Computer Sciences, University of California at Berkeley, pp. 1-17.
Unknown, "Maxim Quad, High-Side MOSFET Drivers", 19-4325; Rev. 2, Oct. 1994, pp. 1-12, Maxim Integrated Products, Sunnyvale, CA.

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