Compact, two-phase charge-coupled-device structure utilizing mul

Details Compact, two-phase charge-coupled-device structure utilizing mul Compact, two-phase charge-coupled-device structure utilizing mul

1976-10-15

1978-06-27

Larkins, William D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 59, 357 91, 307221D, H01L 2978, Ho1L 2904, G11C 1928

Patent

active

040978850

ABSTRACT:
An improved charge-coupled-device gate structure utilizes three depositions of electrically conductive material to form electrodes, thereby allowing fabrication of two-phase CCD gate structures occupying less wafer surface area and operating at faster speeds than conventional charge-coupled-device gate structures.

REFERENCES:
patent: 3795847 (1974-03-01), Engeler et al.
patent: 3931674 (1976-01-01), Amelio
patent: 3943543 (1976-03-01), Caywood
patent: 3967306 (1976-06-01), Bower
Sequin et al., Charge Transfer Devices, Academic Press, N.Y., (7/75), pp. 20-23, 32-39.
Mohsen et al., "Fabrication and Performance of Offset-Mask Charge Coupled Devices", IEEE J. Solid-State Circuits, vol. SC-11, (2/76), pp. 180-188.

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