Compact transistor structure with adjacent trench isolation and

Details Compact transistor structure with adjacent trench isolation and Compact transistor structure with adjacent trench isolation and

1998-04-07

2000-07-11

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257336, 257344, 257382, 257384, 257510, 257513, H01L 2900, H01L 2994

Patent

active

060877065

ABSTRACT:
A semiconductor integrated circuit with a transistor formed within an active area defined by side-walls of a shallow trench isolation region, and method of fabrication thereof, is described. A gate electrode is formed over a portion of the active area and LDD regions formed that are self-aligned to both the gate electrode and the trench side-walls. A dielectric spacer is formed adjacent the gate electrode and extending to the trench side-walls. In this manner, the spacers essentially cover the LDD regions. Source and drain regions are formed that are adjacent the trench side-walls wherein the spacer serves to protect at least a portion of the LDD regions to maintain a spacing of the S/D regions from the gate electrode edge. In this manner an advantageously lowered E.sub.M provided by LDD regions is maintained. In some embodiments of the present invention, S/D regions are formed by implantation through the trench side-walls.

REFERENCES:
patent: 5683921 (1997-11-01), Nishio et al.
patent: 5844276 (1998-12-01), Fulford, Jr. et al.

Affiliated with

Also associated with

Rating

Compact transistor structure with adjacent trench isolation and does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Compact transistor structure with adjacent trench isolation and , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Compact transistor structure with adjacent trench isolation and will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-544657