Static information storage and retrieval – Associative memories – Ferroelectric cell
Reexamination Certificate
2007-12-04
2007-12-04
Dinh, Son (Department: 2824)
Static information storage and retrieval
Associative memories
Ferroelectric cell
C365S154000
Reexamination Certificate
active
11074913
ABSTRACT:
Improved layouts of binary and ternary content addressable memory cells (BCAM and TCAM) are shown. A content addressable memory cell layout has a plurality of P+ diffusion areas and a plurality of N+ diffusion areas that do not enclose isolation regions and on which shallow trench isolation stress can exert minimal influence on the drive current of the memories. Further, all transistors in the content addressable memory cell layout are oriented in the same direction to avoid unintended variations in electrical performance. The CAM layouts are “process friendly” to accommodate requirements of advanced process technologies such as the 90 nm process.
REFERENCES:
patent: 6236585 (2001-05-01), Hill
patent: 6400592 (2002-06-01), Peterson
patent: 6522563 (2003-02-01), Tanaka et al.
patent: 6563727 (2003-05-01), Roth et al.
patent: 6678174 (2004-01-01), Suzui et al.
patent: 6834003 (2004-12-01), Towler et al.
patent: 6842360 (2005-01-01), Srinivasan
patent: 6900999 (2005-05-01), Yen et al.
patent: 7009862 (2006-03-01), Higeta et al.
patent: 2004/0100810 (2004-05-01), Towler et al.
patent: 2004/0223353 (2004-11-01), Kim et al.
Castagnetti Ruggero
Glenn Joseph Eugene
Venkatraman Ramnath
Dinh Son
King Douglas S.
LSI Corporation
Yee & Associates
LandOfFree
Compact ternary and binary CAM bitcell architecture with no... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Compact ternary and binary CAM bitcell architecture with no..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Compact ternary and binary CAM bitcell architecture with no... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3856668