Compact SRAM cell layout

Static information storage and retrieval – Magnetic bubbles – Guide structure

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357 59, 357 71, 365154, 365182, 365188, H01L 2702, H01L 2348, G11C 1100, G11C 1134

Patent

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051247747

ABSTRACT:
A compact cell design for a static random access memory cell is achieved. The cell has two transistors with gates substantially parallel to each other. One interconnect connects the gate of one transistor to an electrode of the other transistor. Another interconnect connects the gate of the other transistor to an electrode of the first transistor. The two gates and the two interconnects form substantially a rectangle. A power supply circiut line is disposed outside the rectangle. This line and the two interconnects are formed from one conductive layer.

REFERENCES:
patent: 4128670 (1978-12-01), Gaensslen
patent: 4300212 (1981-11-01), Simko
patent: 4663739 (1987-05-01), Monk
patent: 4774203 (1988-09-01), Ikeda et al.
IEEE Transactions on Electron Devices, vol. 36 #9 pp. 1657-1662 by Minami et al.

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