Compact semiconductor device including a thin film capacitor of

Electricity: electrical systems and devices – Electrostatic capacitors – Fixed capacitor

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3613211, 361329, 361330, 257532, H01G 433

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active

055396135

ABSTRACT:
In a semiconductor device which has a substrate, at least one thin film capacitor having a lower electrode layer deposited on the substrate, a dielectric layer overlaid on the lower electrode layer, and an upper electrode layer stacked on the dielectric layer, the lower electrode layer is surrounded by an insulator layer of Si.sub.3 N.sub.4.

REFERENCES:
patent: 5046043 (1991-09-01), Miller et al.
patent: 5198384 (1993-03-01), Dennison
patent: 5206788 (1993-04-01), Larson et al.
patent: 5212620 (1993-05-01), Evans, Jr. et al.
patent: 5227855 (1993-07-01), Momose
patent: 5303182 (1994-04-01), Nakao et al.
patent: 5335138 (1994-08-01), Sandhu et al.
"3-Dimensional Stacked Capacitor Cell For 16M and 64M DRAMS" by EMA et al., MOS Division, Fujitsu Limited, Kawasaki, Japan, 1988 IEEE, pp. 592-595.
IEDM, Dec. 1991, pp. 32.1.1-32.1.4, "A stacked capacitor with (Ba.sub.x Sr.sub.1-x)TiO.sub.3 for 256M DRAM" by Koyama et al.

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