Compact self-aligned body contact silicon-on-insulator transisto

Details Compact self-aligned body contact silicon-on-insulator transisto Compact self-aligned body contact silicon-on-insulator transisto

1996-05-20

1998-10-13

Whitehead, Jr., Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257347, 257348, 257349, 257353, H01L 27108

Patent

active

058215751

ABSTRACT:
A field effect transistor structure having a first type conductivity semiconductor body disposed on an insulator and having formed in different regions of the semiconductor, a source region and a drain region of the opposite type conductivity to the first type, a gate electrode adapted to control a flow of carriers in a channel through the semiconductor body between the source and drain regions, and a Schottky diode contact region between the semiconductor body and one of the source or the drain regions. With such an arrangement, the Schottky diode, when forward biased provides a fixed voltage, about 0.3 volts, between the semiconductor body and one of the source or the drain regions.

REFERENCES:
patent: 4771323 (1988-09-01), Saski
patent: 5629544 (1997-05-01), Voldman et al.

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