Compact nonvolatile memory using substrate hot carrier injection

Static information storage and retrieval – Floating gate – Particular connection

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36518528, G11C 1134

Patent

active

060916346

ABSTRACT:
A split gate nonvolatile memory cell which is highly scalable includes a cell formed in a triple well. A select transistor can have a source which also acts as the emitter of a lateral bipolar transistor. The lateral bipolar transistor operates as a charge injector. The charge injector may provide electrons for substrate hot electron injection of electrons onto the floating gate for programming.

REFERENCES:
patent: 4429326 (1984-01-01), Watanabe et al.
patent: 5867425 (1999-02-01), Wong
patent: 5896315 (1999-04-01), Wong
patent: 5912488 (1999-06-01), Kim et al.

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