Compact noncontact excess carrier lifetime characterization appa

Details Compact noncontact excess carrier lifetime characterization appa Compact noncontact excess carrier lifetime characterization appa

1993-10-04

1995-12-19

Wieder, Kenneth A.

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

324642, G01R 3126, G01R 2706

Patent

active

054771587

ABSTRACT:
An apparatus (10) is provided for measuring the excess carrier lifetime in a semiconductor material, such as an HgCdTe wafer (MCT). The apparatus includes a computer controller (56) which automates the functions of the apparatus, including the operation of the shutter (28) to control the time the testing samples are exposed to the excitation energy from a laser (14), the laser energy intensity on the sample, the position of the wafer controlled by the computer controller operating a motorized sample positioner (39) and maintaining the temperature of the sample. Multiple samples are taken by the apparatus which are averaged and analyzed to result in a characterization of the carrier lifetime.

REFERENCES:
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patent: 5081414 (1992-01-01), Kusama et al.
patent: 5196786 (1993-03-01), Usami et al.
Photoconductivity Lifetime Measurements on HgCdTe Using A Contactless Microwave Technique M. C. Chen, 15 Jul. 1988, J. Appl. Phys., pp. 945-947.
Non-Contact Lifetime Screening Technique for HgCdTe Using Transient Millimetre-Wave Reflectance.
A. J. Brouns, T. R. Schimert, P. Mitra, F. C. Case, S. L. Barnes and Y. L. Tyan, Semicond. Sci. Technol. 8, 1993, pp. 928-935.
Properties of HgCdTe Layers Grown by Isothermal Vapour Phase Epitaxy at High Pressure, Semicond. Sci. Technol. 8 (1993) S205-S210.
The Study of Charge Carrier Kinetics in Semiconductors by Microwave Conductivity Measurements, M. Kunst and G. Beck.
J. Appl. Phys. 60 (10), 15 Nov. 1986 .COPYRGT.1986 American Institute of Physics, pp. 3558-3566.
Non-Destructive Characterization of HgCdTe Using Photo-Induced Microwave Reflection E. J. Spada, V. R. Rao, I. Bhat, J. M. Borrego, Feb. 1993.
Noncontact Lifetime Characterization Technique for LWIR HgCdTe Using Transient Millimeter-wave Reflectance, T. R. Schimert, J. Tyan, S. L. Barnes, V. E. Kenner and A. J. Brouns, Reprinted from Growth and Characterization of Materials for Infrared Detectors and Nonlinear Optical Switches 2-3 Apr. 1991, vol. 1484, SPIE-The International Society for Optical Engineering.

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