Compact MOSFET device with reduced plurality of wire contacts

Details Compact MOSFET device with reduced plurality of wire contacts Compact MOSFET device with reduced plurality of wire contacts

1980-08-06

1983-08-02

Davie, James W.

357 20, 357 41, 357 59, H01L 2906, H01L 2978, H01L 2702, H01L 2904

Patent

active

043969305

ABSTRACT:
A semiconductor device and a method for manufacturing the same are disclosed wherein an insulating thin film is formed on the surface of a semiconductor substrate, a gate electrode region of conductivity type different from that of the semiconductor substrate is selectively formed within the substrate and contiguous with the surface of the substrate, and source and drain regions are formed at the upper portion of the insulating thin film so that the voltage applied to the gate electrode region is below the reverse-breakdown voltage across a PN junction between the semiconductor substrate and the gate electrode region and determines the electrical conductivity of the source and drain regions.

REFERENCES:
A. K. Malhotra and G. W. Neudeck, "Field-effect conductance change in amorphous silicon", Applied Physics Letters, vol. 24, No. 11 (1974) pp. 557-559.

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