Compact monolithic wide band HEMT low noise amplifiers with regu

Details Compact monolithic wide band HEMT low noise amplifiers with regu Compact monolithic wide band HEMT low noise amplifiers with regu

1993-10-20

1995-02-07

Mottola, Steven

Amplifiers

With semiconductor amplifying device

Including particular biasing arrangement

330277, H03F 316

Patent

active

053878809

ABSTRACT:
Monolithic regulated self-bias circuits for High Electron Mobility Transistor (HEMTs) integrated circuit applications provide reliable performance which can withstand wide HEMT threshold voltage variation (.+-.5 V). The threshold voltage variations are inherent with HEMT devices due to the nature of HEMT process fabrication and material growth properties. Three regulated self-bias circuits are disclosed: active regulated negative current source bias; active regulated positive current source bias; resistive self-bias connected to a cascode source-follower amplifier. The positive and negative regulated current source bias can also be connected with HEMT low noise amplifiers.

REFERENCES:
patent: 4912430 (1990-03-01), Frank
patent: 4990973 (1991-02-01), Ishikawa et al.
patent: 5010588 (1991-04-01), Gimlett
patent: 5083095 (1992-01-01), Madaffari
patent: 5130667 (1992-07-01), Chang et al.

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