Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Patent
1995-12-01
1997-09-23
Tran, Minh-Loan
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
257 98, 257 99, 257100, 257669, H01L 3300
Patent
active
056707975
ABSTRACT:
On an insulating substrate through which a plurality of through holes are formed, the following components and members are provided: LED chips, each of which consists of a p-side semiconductor layer and an n-side semiconductor layer that are joined into a p-n junction, and is placed between the adjacent through holes; a first electrode which is formed in one of the adjacent through holes, and connected to the p-side semiconductor layer so as to form electrical connections on the bottom surface of the insulating substrate; and a second electrode which is formed in the other adjacent through hole in a separate manner from the first electrode, and connected to the n-side semiconductor layer so as to form electrical connections on the bottom surface of the insulating substrate. Further, each through hole is sealed by a sealing member such as a conductive bonding agent. Moreover, the LED chips are sealed by a light-transmitting resin. With this arrangement, it is possible to easily mass-produce compact light-emitting devices with high reliability by cutting the insulating substrate along the through holes.
REFERENCES:
patent: 5475241 (1995-12-01), Harrah et al.
Sharp Kabushiki Kaisha
Tran Minh-Loan
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