Compact layout for a semiconductor device

Details Compact layout for a semiconductor device Compact layout for a semiconductor device

2005-02-15

2005-02-15

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With specified electrode means

C257S565000, C257S621000

Reexamination Certificate

active

06856004

ABSTRACT:
A semiconductor device includes a semiconductor substrate, an electrode disposed on an upper surface of the substrate, and a set of one or more transistor element(s) disposed on the upper surface of the substrate. The set of transistor element(s) compactly surrounds the electrode with a threshold distance. In one embodiment, the set also compactly surrounds a via hole. In another, the element(s) comprises a bipolar junction transistor that has an aggregate emitter length of not less than 10 microns. In still another embodiment, the device is coupled to a RF circuit for power amplification.

REFERENCES:
patent: 3210621 (1965-10-01), Strull
patent: 4250518 (1981-02-01), Bloodworth et al.
patent: 5572063 (1996-11-01), Iranmanesh
patent: 6633075 (2003-10-01), Shirakawa

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