Compact isolation and antiblooming structure for full-frame CCD

Details Compact isolation and antiblooming structure for full-frame CCD Compact isolation and antiblooming structure for full-frame CCD

1997-07-28

1998-09-08

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

438 60, 438 75, 438 76, 438 78, H01L 3118

Patent

active

058044655

ABSTRACT:
By introducing an n-type drain implant substantially below the surface of the p-type substrate of a full frame image sensor, then enclosing the drain on the bottom and the sides with a deep p-type implant, and accumulating the surface with a shallow p-type implant, with all implantations performed through the same mask aperture, the blooming control, channel stop, and dark current suppression features of the imager are compressed, increasing the fill factor, facilitating pixel miniaturization, and therefore enabling high resolution imaging applications.

REFERENCES:
patent: 5114865 (1992-05-01), Kimura
patent: 5118631 (1992-06-01), Dyck et al.

Affiliated with

Also associated with

Rating

Compact isolation and antiblooming structure for full-frame CCD does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Compact isolation and antiblooming structure for full-frame CCD , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Compact isolation and antiblooming structure for full-frame CCD will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1281450