Compact isolation and antiblooming structure for full-frame CCD

Details Compact isolation and antiblooming structure for full-frame CCD Compact isolation and antiblooming structure for full-frame CCD

1995-11-17

1998-02-03

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257229, 257230, H01L 27148, H01L 29768

Patent

active

057147760

ABSTRACT:
By introducing an n-type drain implant substantially below the surface of the p-type substrate of a full frame image sensor, then enclosing the drain on the bottom and the sides with a deep p-type implant, and accumulating the surface with a shallow p-type implant, with all implantations performed through the same mask aperture, the blooming control, channel stop, and dark current suppression features of the imager are compressed, increasing the fill factor, facilitating pixel miniaturization, and therefore enabling high resolution imaging applications.

REFERENCES:
patent: 4593303 (1986-06-01), Dyck et al.
patent: 4916501 (1990-04-01), Thenoz et al.
patent: 5118631 (1992-06-01), Dyck et al.

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