Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1993-03-11
1994-09-27
Berman, Jack I.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250398, 250251, H01J 37317
Patent
active
053509269
ABSTRACT:
A compact high current broad beam ion implanter capable of serial processing employs a high current density source, an analyzing magnet to direct a desired species through a resolving slit, and a second magnet to deflect the resultant beam while rendering it parallel and uniform along its width dimension. Both magnets have relatively large pole gaps, wide input and output faces, and deflect through a small radius of curvature to produce a beam free of instabilities. Multipole elements incorporated within at least one magnet allow higher order aberrations to be selectively varied to locally adjust beam current density and achieve the high degree of uniformity along the beam width dimension.
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Renau Anthony
Sieradzki Manny
White Nicholas R.
Berman Jack I.
Diamond Semiconductor Group, Inc.
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