Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Patent
1994-08-31
1997-10-21
Whitehead, Carl W.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
257 11, 257618, 257622, 257773, 313302, 313303, 313306, 313307, 313309, H01L 2980, H01J 146
Patent
active
056799608
ABSTRACT:
A device for emitting electrons, comprising a substrate, an insulating film formed on a surface of the substrate and having a recess, an emitter electrode formed on the insulating film and having an edge portion located at the recess, the edge portion of the emitter electrode being formed in the form of an arch within a plane perpendicular to the surface of the substrate so as to be sharpened toward a distal end of the emitter electrode, the edge portion of the emitter electrode being sharpened also in a planar direction parallel to the surface of the substrate toward the distal end of the emitter electrode so as to have a linear portion at the distal end, and the edge portion of the emitter electrode being adapted to emit electrons from the linear portion when an electric field is applied to the edge portion of the emitter electrode, and a gate electrode formed on the insulating structure and having an edge portion located at the recess and opposing the edge portion of the emitter electrode via a gap, the edge portion of the gate electrode being adapted to apply an electric field to the linear portion of the emitter electrode via the gap when a potential difference is given between the gate electrode and the emitter electrode.
REFERENCES:
patent: 4574216 (1986-03-01), Hoeberechts et al.
patent: 5389796 (1995-02-01), Kang et al.
Patent Abstracts of Japan, vol. 13, No. 534 (E-852), Nov. 29, 1989, JP-A-01 220341, Sep. 4, 1989.
Patent Abstracts of Japan, vol. 17, No. 257 (E-1368), May 20, 1993, JP-A-05 002999, Jan. 8, 1993.
Funji Itoh and Seigo Kanemaru, "Industrial Application of Charged Particle Beam", 111th Laboratory Material for 132nd Committee of Japan Society for the Promotion of Science (1990), pp. 7-13.
Optronics No. 109 (1991), pp. 193-198 by Junji Itoh and Seigo Kanemaru.
J. IEE Japan, vol. 112, No. 4 (1992), pp. 257-262 by Kuniyoshi Yokoh in Electrical Communication Laboratory of Tohoku University.
Kabushiki Kaisha Toshiba
Whitehead Carl W.
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