Compact combiner for semiconductor devices operating in the ultr

Details Compact combiner for semiconductor devices operating in the ultr Compact combiner for semiconductor devices operating in the ultr

1987-04-06

1989-06-13

Wojciechowicz, Edward J.

Wave transmission lines and networks

Automatically controlled systems

With control of equalizer and/or delay network

357 75, 357 80, 333247, 381 96, 381117D, H01L 2702

Patent

active

048397121

ABSTRACT:
The invention relates to a compact combiner for ultra-high frequency semiconductor devices, such as negative resistance diodes (Gunn - Impatt). The combiner according to the invention combines on a base: at least one semiconductor pellet or a plurality of semiconductor devices integrated into a single pellet at the center of the base, a first ring of capacitors as located elements, a second dielectric material ring metallized on two opposite planar faces, forming both a second capacitor and part of the encapsulation box of the combiner; and metal tapes ensuring the connections between the active components and the capacitors and simultaneously forming non-located element chokes. A metal cover welded to the outer ring seals the box and supplies the bias. The compact combiner may be used in applications of ultra-high frequency amplifiers and oscillators.

REFERENCES:
patent: 3826953 (1974-07-01), Le Gales
patent: 4042952 (1977-08-01), Kraybill
patent: 4067040 (1978-01-01), Tsuzuki et al.
patent: 4172261 (1979-10-01), Tsuzuki et al.
patent: 4200880 (1980-04-01), Frey
patent: 4259684 (1981-03-01), Dean et al.
R. Tenenholtz, "Designing Megawatt Diode Duplexers", Microwave Journal, vol. 22, No. 1, Jan., 1979, pp. 63-68.

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