Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – On insulating substrate or layer
Reexamination Certificate
2001-06-12
2003-10-21
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
On insulating substrate or layer
C438S197000
Reexamination Certificate
active
06635542
ABSTRACT:
FIELD OF THE INVENTION
The field of the invention is that of forming a body contact in SOI integrated circuits.
BACKGROUND OF THE INVENTION
The need for a body contact in SOI FETs is well known. Many schemes have been proposed to provide a conductive path to ground to draw holes away from the transistor body. A straightforward approach is to increase the active area within the isolation dielectric to provide room to place a contact on the surface and an implant below the surface to provide a low-resistance path from the body to the contact. Such an approach, of course, takes up valuable silicon area.
Additionally, as the silicon device layer becomes thinner, it becomes increasingly more difficult to contact the body without incurring a large series resistance in the traditional approach.
SUMMARY OF THE INVENTION
The invention relates to a body contact that employs a leaky p-n junction (diode) in one of the source and drain, so that a conductive path is formed from the body through the leaky p-n junction to the transistor terminal. The other p-n junction in the FET has standard properties, so that there is no excessive leakage through the transistor.
A feature of the invention is the use of a non-critical block mask for one or more leakage implants, together with an angled leakage implant that penetrates under the gate to deliver a higher concentration of leakage ions at the p-n junction.
REFERENCES:
patent: 5547894 (1996-08-01), Mandelman et al.
patent: 5923987 (1999-07-01), Burr
patent: 6110783 (2000-08-01), Burr
Ellis-Monaghan John J.
Ku Suk Hoon
Sleight Jeffrey W.
Varekamp Patrick R.
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