Commonly housed diverse semiconductor die with reduced inductanc

Details Commonly housed diverse semiconductor die with reduced inductanc Commonly housed diverse semiconductor die with reduced inductanc

1998-04-27

2000-11-07

Guay, John

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

For plural devices

257724, 257773, H01L 2334

Patent

active

061440930

ABSTRACT:
A MOSFET die and a Schottky diode die are each mounted within a device package on a common lead frame pad with their drain and cathode terminals, respectively, connected together at the common pad. The source terminal of the MOS gated device and the anode terminal of the Schottky diode are each electrically connected by wire bonds to an insulated pin, and the gate electrode of the MOS gated device is electrically connected by wire bonds to another pin. A redundant wire connection runs from the source terminal of the MOS gated device to the anode terminal of the Schottky diode reduce the inductance in the anode lead.

REFERENCES:
patent: 5083189 (1992-01-01), Sawaya
patent: 5084753 (1992-01-01), Goida et al.
patent: 5200640 (1993-04-01), Scheftic et al.
patent: 5332921 (1994-07-01), Dousen et al.
patent: 5544038 (1996-08-01), Fisher et al.
patent: 5814884 (1998-09-01), Davis et al.

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