Commonly housed diverse semiconductor die

Details Commonly housed diverse semiconductor die Commonly housed diverse semiconductor die

1998-09-28

2000-10-17

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

For plural devices

257773, 257901, H01L 2334, H01L 2348, H01L 2352, H01L 2940, H01L 27088

Patent

active

061336327

ABSTRACT:
A MOSFET die and a Schottky diode die are mounted on a common lead frame pad and their drain and cathode, respectively, are connected together at the pad. The pad has a plurality of pins extending from one side thereof. The lead frame has insulated pins on its opposite side which are connected to the FET source, the FET gate and the Schottky diode anode respectively by wire bonds. The lead frame and die are molded in an insulated housing and the lead frame pins are bent downwardly to define a surface-mount package.

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"Electronic Engineering", Dec. 1991, Yehya Kasem and Leo Feinstein, High Performance Power Package for Power IC Devices, Part 1, pp. 35-43.

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