Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2007-10-02
2007-10-02
Huff, Mark F. (Department: 1756)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
Reexamination Certificate
active
10708010
ABSTRACT:
A method of making an embedded attenuated phase shift mask (EAPSM) comprises initially providing a phase shift mask substrate having a layer of phase shifting material and a layer of an opaque material, and depositing a first resist layer on the substrate. The first resist layer is exposed by a direct write electron beam or laser energy source and developed, and the substrate is etched, to create first level phase shifting image segments on the substrate corresponding to areas of critical structures to be exposed with the EAPSM. The method then includes depositing a second resist layer on the substrate. Using a single frame exposure mask corresponding to non-critical areas outside the critical structure areas, the second resist layer is then exposed by simultaneous projection exposure. The method then includes developing the second resist layer and etching the substrate to remove the opaque material from the critical structure areas.
REFERENCES:
patent: 4343877 (1982-08-01), Chiang
patent: 4797334 (1989-01-01), Glendinning
patent: 5405734 (1995-04-01), Aita
patent: 5679483 (1997-10-01), Maurer
patent: 5741613 (1998-04-01), Moon et al.
patent: 6194103 (2001-02-01), Tzu et al.
patent: 6277527 (2001-08-01), O'Grady et al.
patent: 6306549 (2001-10-01), Baracchi
patent: 6415431 (2002-07-01), Neary
patent: 6423455 (2002-07-01), Tzu
patent: 6472766 (2002-10-01), Xiao
patent: 6524755 (2003-02-01), Jin et al.
patent: 6529463 (2003-03-01), Goodberlet
patent: 6544696 (2003-04-01), Westerman et al.
patent: 6549277 (2003-04-01), Narushima et al.
patent: 6710847 (2004-03-01), Irie
patent: 2001/0036581 (2001-11-01), Inao et al.
DeLio & Peterson LLC
Huff Mark F.
International Business Machines - Corporation
Kotulak Richard M.
Peterson Peter W.
LandOfFree
Common second level frame exposure methods for making... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Common second level frame exposure methods for making..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Common second level frame exposure methods for making... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3831801