Amplifiers – With semiconductor amplifying device – Including field effect transistor
Reexamination Certificate
2006-12-05
2009-02-10
Nguyen, Khanh V (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including field effect transistor
C330S310000
Reexamination Certificate
active
07489194
ABSTRACT:
A radio-frequency amplifier is provided. The radio-frequency amplifier includes a transistor having an input terminal, an output terminal, a control terminal, and a transconductance gm. A series-connected feed-through resistance Rfand feed-through capacitance Cfis connected in parallel with the input terminal and the output terminal of the transistor. A load resistance RLis connected to the output terminal. The control terminal of the transistor is biased at a fixed voltage. Part of the transistor noise follows the looped path through the feed-through resistor instead of passing on to the load, which reduces the noise figure of the amplifier. The value of gm, Rfand RLare chosen in a way to keep the input impedance of the amplifier matched to a well-defined signal source impedance.
REFERENCES:
patent: 4001711 (1977-01-01), Knutson et al.
patent: 5172074 (1992-12-01), Shiga
patent: 5361038 (1994-11-01), Allen et al.
patent: 5926069 (1999-07-01), Ko et al.
patent: 6278329 (2001-08-01), Palmisano et al.
patent: 6366166 (2002-04-01), Belot
patent: 6392490 (2002-05-01), Gramegna et al.
patent: 6724253 (2004-04-01), Hau et al.
patent: 6768380 (2004-07-01), Hong et al.
patent: 6806777 (2004-10-01), Franca-Neto
patent: 54172531 (1979-12-01), None
patent: 07204367 (1995-10-01), None
International Search Report for PCT/US03/39174, May 5, 2004, 3pgs.
D.K. Shaeffer et al., A 1.5-V, 1.5-GHz CMOS Low Noise Amplifier,IEEE Journal of Solid-State Circuits, IEEE, Inc., May 1997, pp. 745-759, vol. 32, No. 5, New York, N.Y.
H. Darabi et al., “A 4.5-mW 900 MHz CMOS Receiver for Wireless Paging,”IEEE Journal of Solid-State Circuits, Aug. 2000, pp. 1085-1096, vol. 35. No. 8.
S. Wu et al., “A 900-MHZ/1.8GHz CMOS Receiver for Dual-Band Applications,”IEEE Journal of Solid-State Circuits, Dec. 1998, pp. 2178-2185, vol. 33, No. 12.
A. Rofougaran et al., “A 1 GHz CMOS RF Front-End IC for a Direct-Conversion Wireless Receiver,”IEEE Journal of Solid-State Circuits, Jul. 1996, pp. 880-889, vol. 31, No. 7.
J.C. Rudell et al., “A 1.9 GHz Wide-Band IF Double Conversion CMOS Receiver for Cordless Telephone Applications,”IEEE Journal of Solid-State Circuits, Dec. 1997, pp. 2071-2088, vol. 32, No. 12.
H. Samavati et al., “A 5-GHz CMOS Wireless LAN Receiver Front End,”IEEE Journal of Solid-State Circuits, May 2000, pp. 765-772, vol. 35, No. 5.
B.A. Floyd et al., A 23.8-GHz SOI CMOS Tuned Amplifier,IEEE Transactions on Microwave Theory and Techniques, Sep. 2002, pp. 2193-2196, vol. 50, No. 9.
P. Leroux et al., “A 0.8-dB NF ESD-Protected 9-mW CMOS LNA Operating at 1.23 GHz,”IEEE Journal of Solid-State Circuits, Jun. 2002, pp. 760-765, vol. 37, No. 6.
S.F. Tin et al., “A Simple Subcircuit Extension of the BSIM3v3 Model for CMOS RF Design,”IEEE Journal of Solid-State Circuits, Apr. 2000, pp. 612-624, vol. 35, No. 4.
H. Hashemi et al., “Concurrent Multiband Low-Noise Amplifiers—Theory, Design, and Applications,”IEEE Transactions on Microwave Theory and Techniques, Jan. 2002, pp. 288-301, vol. 50, No. 1.
B.A. Floyd et al., “A 15-GHz Wireless Interconnect Implemented in a 0.18 (μm) CMOS Technology Using Integrated Transmitters, Receivers, and Antennas,”2001 Symposium on VLSI Circuits Digest of Technical Papers, Jun. 2001, pp. 155-158.
X. Guan et al., “A 24 GHz CMOS Front-End,” inProc. 28thESSCIRC, Sep. 2002, pp. 155-158.
S.M. Alamouti, “A Simple Transmit Diversity Technique for Wireless Communications,”IEEE Journal on Select Areas in Communications, Oct. 1998, pp. 1451-1458, vol. 16, No. 8.
D. Lu et al., “A 24-GHz Active Patch Array,”International Journal of Infrared and Millimeter Waves, May 2002, pp. 693-704, vol. 23.
D.K. Shaeffer et al., “A 1.5V, 1.5GHz CMOS Low Noise Amplifier,”1996 Symposium on VLSI Circuits Digest of Technical Papers, Jun. 1996, pp. 32-33.
R.S. Elliott, “Beamwidth and Directivity of Large Scanning Arrays, First of Two Parts,”Microwave Journal, Dec. 1963, pp. 53-60.
J.C. Liberti et al., “Smart Antennas for Wireless Communications: IS-95 and Third Generation CDMA Application,” 1999, pp. 83-88, Prentice Hall, New Jersey.
Y.C. Ho et al., “3 V Los Noise Amplifier Implemented Using a 0.8 (μm) CMOS Process With Three Metal Layers for 900 MHz Operation,”Electronic Letters, Jun. 1996, pp. 1191-1193, vol. 32, No. 13.
D.K. Shaeffer et al., “The Design and Implementation of Low-Power CMOS Radio Receivers,” 1999, pp. 52-67, Kluwer Academic Publishers, Boston.
Y.C. Ho et al., “Implementation and Improvement for RF Low Noise Amplifiers in Conventional CMOS Technologies,” 2000, Ph.D. Thesis, University of Florida, Florida.
A. Van Der Ziel, “Noise in Solid State Devices and Circuits,” 1986, pp. 88-91, New York: Wiley.
Guan Xiang
Hajimiri Seyed-Ali
California Institute of Technology
Jackson Walker L.L.P.
Nguyen Khanh V
Rourk Christopher J.
LandOfFree
Common gate with resistive feed-through low noise amplifier does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Common gate with resistive feed-through low noise amplifier, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Common gate with resistive feed-through low noise amplifier will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4130116