Common contact hole structure in semiconductor device

Details Common contact hole structure in semiconductor device Common contact hole structure in semiconductor device

1995-10-30

2000-02-29

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257382, 257384, 257768, H01L 2348, H01L 2352, H01L 2940, H01L 2976

Patent

active

060312912

ABSTRACT:
A semiconductor device having a semiconductor substrate, an impurity diffused layer formed in a principal surface of the semiconductor substrate, a conductive member formed on the semiconductor substrate adjacent to the impurity diffused layer and having a sloped surface inclined to the principal surface of the semiconductor substrate, an insulator film deposited to cover the impurity diffused layer and the conductive member, and a common contact hole formed through the insulator film to extend over a surface of the impurity diffused layer and the sloped surface of the conductive member.

REFERENCES:
patent: 3604990 (1971-09-01), Sigsbee
patent: 5346835 (1994-09-01), Malhi et al.
patent: 5521416 (1996-05-01), Matsuoka et al.
patent: 5532516 (1996-07-01), Pasch et al.
patent: 5592013 (1997-01-01), Honda
Halliday and Resnick, Physics Parts I and II, p. 1023, Dec. 1966.

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