Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having substrate registration feature
Reexamination Certificate
2002-04-30
2003-11-11
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Having substrate registration feature
C438S401000, C438S427000, C438S753000, C438S756000, C073S001010
Reexamination Certificate
active
06645824
ABSTRACT:
BACKGROUND
1. Field of the Invention
The present invention is directed to integrated circuit metrology methods and apparatuses, and more particularly to augmentation of projection microscopy methods and apparatuses with optical profilometry methods and apparatuses, and augmentation of optical profilometry methods and apparatuses with projection microscopy methods and apparatuses.
2. Related Art
As the scale of semiconductor devices decreases, control of the profile of the features of integrated circuit structures formed on semiconductor wafers becomes increasingly difficult. Yet to insure high throughput of circuits that perform according to design, it is desirable to obtain the profiles of features of integrated circuit structures, and particularly their critical dimensions.
The profile of structures formed on a wafer can be obtained using projection microscopy, such as critical dimension scanning electron microscopes/microscopy (CD-SEM). In a typical CD-SEM system, images are produced by an electron beam's transmission through the structures formed on the semiconductor wafer. However, refraction and reflections of the beam from surfaces of the structures can cause distortions in the CD-SEM image.
SUMMARY
In one embodiment, a metrology method and system of structures on a wafer includes obtaining a projection image of at least a first portion of the structures on the wafer using a first metrology apparatus. A profile of at least a second portion of the structure on the wafer is obtained using a second metrology apparatus. The information from the profile obtained using the second metrology apparatus and the information from the projection image obtained using the first metrology apparatus are combined using a processor.
REFERENCES:
patent: 5578745 (1996-11-01), Bayer et al.
Bao Junwei
Jakatdar Nickhil
Niu Xinhui
Okumoto Yasuhiro
Yang Wenge
Timbre Technologies, Inc.
Tran Mai-Huong
LandOfFree
Combined optical profilometry and projection microscopy of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Combined optical profilometry and projection microscopy of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Combined optical profilometry and projection microscopy of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3145614