Combined multiple beam size and spiral scan method for electron

Details Combined multiple beam size and spiral scan method for electron Combined multiple beam size and spiral scan method for electron

1975-06-13

1976-05-11

Church, Craig E.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

148 15, 219121EB, G01N 2304

Patent

active

039566358

ABSTRACT:
A method for electron beam writing of microcircuit patterns utilizing the combination of spiral scan techniques and variable beam sizes. The circuit patterns are outlined in a spiral scan motion using a small size beam in order to ensure good edge sharpness and accuracy. The beam is then increased in size to fill-in the inside area of the pattern. Increasing the beam size increases the beam current and, correspondingly, the exposure speed and system throughput.

REFERENCES:
patent: 3547074 (1970-12-01), Hirschfeld
"Application of Electron/Ion Beam Technology to Microelectronics," Brewer, IEEE Spectrum, Jan. 1971, pp. 23-37.

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