Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1975-05-16
1976-11-23
Rutledge, L. Dewayne
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29577, 29578, 148187, 357 35, 357 44, 357 46, 357 50, H01L 2176, H01L 2120
Patent
active
039935132
ABSTRACT:
A process for fabricating oxide-isolated vertical bipolar transistors and complementary oxide-isolated lateral bipolar transistors incorporates the steps of growing a doped epitaxial layer of single-crystal silicon on a silicon substrate, applying a first insulation material in a selected pattern over the epitaxial layer to define oxide-isolation regions and device regions, etching grooves in the areas in which oxide-isolation regions will be formed, applying a self-aligned base insulation material over those portions of the interface between the first insulation material and the grooves which bound the region between the base of any vertical bipolar transistor to be formed and the emitter of any lateral bipolar transistor to be formed, applying an impurity of a conductivity type opposite to the conductivity type of the epitaxial layer to those groove areas not covered by the self-aligned base insulation material, the impurity serving to prevent emitter-to-collector inversion along the wall of the base of any vertical bipolar transistor without shorting the emitter and collector of any lateral bipolar transistor, forming oxide-isolation regions in the grooves and forming the vertical bipolar transistors and the lateral bipolar transistors in the device regions. The process of the present invention will produce discrete lateral bipolar transistors, discrete vertical bipolar transistors capable of operation in the conventional mode or in the inverse mode, or a composite structure which merges both a vertical bipolar transistor and a lateral bipolar transistor together on the same silicon island to form an injection-logic gate in which the base of the vertical bipolar transistor serves as the collector of the lateral bipolar transistor, the vertical transistor being operated in the inverse mode.
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Berger et al, "Merged-Transistor Logic-Concept" IEEE J. Solid State Circuits, vol. SC-7, No. 5, Oct. 1972, pp. 340-346.
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Cosand, A., "Very High Speed Low Power-Circuit Process" IEEE Electron Devices Mtg, Wash. D.C., 1973, pp. 35-37.
Fairchild Camera and Instrument Corporation
MacPherson Alan H.
Richbourg J. Ronald
Rutledge L. Dewayne
Saba W. G.
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