Combined JFET and MOS transistor device, circuit

Details Combined JFET and MOS transistor device, circuit Combined JFET and MOS transistor device, circuit

1995-07-13

1996-08-06

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257272, 257408, H01L 2980, H01L 31112, H01L 2976

Patent

active

055436439

ABSTRACT:
A transistor circuit is formed on a substrate having source and drain electrodes and multiple current-controlling gates. The two current-controlling gates are separated by spacer oxide material. The first gate is an metal oxide semiconductor (MOS) gate that is insulated from the substrate by a layer of gate oxide. The second gate is a junction field effect transistor (JFET) gate contiguous to the MOS gate that is insulated from the MOS gate by a layer of spacer oxide.

REFERENCES:
patent: 5418392 (1995-05-01), Tanabe

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