Combined electron beam semiconductor modulator and junction lase

Details Combined electron beam semiconductor modulator and junction lase Combined electron beam semiconductor modulator and junction lase

1974-09-06

1976-03-02

Larkins, William D.

Oscillators

Molecular or particle resonant type

330 33, 330 44, 331 945M, 357 16, 357 18, 357 19, 357 29, H01S 310, H01S 319

Patent

active

039421325

ABSTRACT:
A combined pulse modulated laser in which a modulated cold cathode device is utilized to excite a combined electron beam bombarded semiconductor device grown integrally with a crystal laser to achieve modulation of the laser output with fast rise and fall times under low voltage and high current conditions.

REFERENCES:
patent: 3283160 (1966-11-01), Levitt et al.
Wagner, "EBS Application to Laser Pulsing," IEEE Journal of Quantum Electics, Vol. QE -9, pp. 606-607, June 1973.
Schade et al.,"GaAs-(AlGa)As Cold-Cathode Structure," Applied Physics Letters, Vol. 20, No. 10, 15 May 1972, pp. 385-387.

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