Combined E-beam and optical exposure semiconductor lithography

Details Combined E-beam and optical exposure semiconductor lithography Combined E-beam and optical exposure semiconductor lithography

2005-04-05

2005-04-05

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

With measuring or testing

Optical characteristic sensed

C438S401000, C438S462000, C257S797000

Reexamination Certificate

active

06875624

ABSTRACT:
Combined e-beam and optical exposure lithography for semiconductor fabrication is disclosed. E-beam direct writing to is employed to create critical dimension (CD) areas of a semiconductor design on a semiconductor wafer. Optical exposure lithography is employed to create non-CD areas of the semiconductor design on the semiconductor CD's of the semiconductor design can also be separated from non-CD's of the semiconductor design prior to employing e-beam direct writing and optical exposure lithography.

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