Combined bipolar-field effect transistor resurf devices

Details Combined bipolar-field effect transistor resurf devices Combined bipolar-field effect transistor resurf devices

1985-10-25

1987-01-27

Larkins, William D.

357 238, 357 43, 357 13, 357 21, 357 37, 357 89, H01L 2702, H01L 2978, H01L 2990, H01L 2900

Patent

active

046397612

ABSTRACT:
A combined bipolar-field effect transistor RESURF device includes a lightly-doped epitaxial buried layer of a first conductivity type located between a semiconductor substrate of the first conductivity type and an epitaxial surface layer of a second conductivity type opposite to that of the first. The doping concentration and thickness of the epitaxial surface layer are selected in accordance with the Reduced Surface Field (RESURF) technique. A highly-doped buried region of the second conductivity type is located beneath the base region of the device and is sandwiched between the epitaxial buried layer and the epitaxial surface layer. The advantages of such a device include a substantially reduced "on" resistance, a more compact and flexible configuration, improved switching characteristics, reduced base device current requirements, and improved isolation. The device may be further enhanced by providing a buried annular region of the first conductivity type around and in contact with the buried region, and a surface-adjoining annular region of the first conductivity may be provided adjacent the base region.

REFERENCES:
patent: 4095252 (1985-01-01), Ochi
patent: 4233617 (1980-11-01), Klassen et al.
patent: 4266238 (1981-05-01), Nishizawa
patent: 4292642 (1981-09-01), Appels et al.
patent: 4300150 (1981-11-01), Colak
patent: 4344081 (1982-08-01), Pao et al.
patent: 4422089 (1983-12-01), Vaes et al.
Appels et al., "High Voltage Thin Layer Devices (RESURF Devices)", IEEE International Electron Device Meeting Tech. Digest, 12/79, pp. 238-241.
Colak et al., "Lateral DMOS Power Transistor Design", IEEE Electron Device Letters, vol. EDL-1, No. 4, Apr. 1980, pp. 51-53.

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