Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2005-09-27
2005-09-27
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S639000, C257S649000, C257S760000
Reexamination Certificate
active
06949833
ABSTRACT:
The invention offers a structure that includes a substrate with a top surface and a bottom surface, an etched dielectric layer having sidewalls and an upper surface, wherein the etched dielectric layer with a thickness of v, is positioned upon a first portion of the top surface of the substrate but not positioned upon a second portion of the top surface of the substrate having a width equal to x, an atomic layer deposited (ALD) film with a thickness of y, positioned upon the upper surface of the etched dielectric layer, the sidewalls of the etched dielectric layer, and the second portion of the top surface of the substrate, and a trench formed by the atomic layer with a width equal to x−2y. The invention also offers a method of forming a structure with a trench that includes the steps of depositing a dielectric layer on a substrate, forming a patterned photoresist on the dielectric layer, forming a space having a width x, by etching the dielectric layer, removing the patterned photoresist to form a gap having sidewalls and a bottom, and depositing an atomic layer with a thickness of y on the etched dielectric layer, and the sidewalls and the bottom of the gap, wherein a trench is formed by the atomic layer deposited on the sidewalls and bottom of the gap.
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Lamberton Robert William
O'Kane William Jude
Seagate Technology LLC
Vu Hung
LandOfFree
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