Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2006-06-06
2006-06-06
Neims, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S438000, C257S295000
Reexamination Certificate
active
07057253
ABSTRACT:
A magnetic memory cell and method of manufacturing thereof, wherein the angle between the shape anisotropy axis and the intrinsic anisotropy axis of the magnetic material layer is optimized to minimize fluctuations in the switching field. The angle between shape anisotropy axis and intrinsic anisotropy axis is preferably between 45 and less than 90 degrees. Magnetic layers may be used having increased thickness, resulting in increased activation energy. Magnetic memory cells may be manufactured that are more stable for long term storage and have improved write margins.
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Neims David
Nguyen Thinh T
Slater & Matsil L.L.P.
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