Combination of AlN-Y.sub.2 O.sub.3 heat conductive ceramic subst

Details Combination of AlN-Y.sub.2 O.sub.3 heat conductive ceramic subst Combination of AlN-Y.sub.2 O.sub.3 heat conductive ceramic subst

1985-06-05

1986-05-27

McCarthy, Helen M.

Stock material or miscellaneous articles

Composite

Of inorganic material

174 16HS, 361386, 361387, 428901, 501 96, 501 98, 501152, B32B 900, C04B 3558

Patent

active

045915377

ABSTRACT:
A heat conductive ceramic substrate for semiconductor circuits, comprising polycrystalline aluminum nitride of high density containing as an additive boron nitride or oxides of calcium, magnesium, aluminum, titanium, zirconium, chrome, silicon, and/or rare earth metals. The boron nitride additive concentration ranges between 0.1 and 3% by weight, preferably between 0.5 and 2% by weight. The oxide additive concentration ranges between 0.1 and 5% by weight. The substrate has a significantly higher thermal conductivity than aluminum oxide substrates and is more economincal to manufacture than beryllium oxide substrates.

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