Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2008-03-25
2008-03-25
Phung, Anh (Department: 2824)
Static information storage and retrieval
Floating gate
Particular connection
C365S185230
Reexamination Certificate
active
11633334
ABSTRACT:
A combination EEPROM and Flash memory is described containing cells in which the stacked gate transistor of the Flash cell is used in conjunction with a select transistor to form an EEPROM cell. The select transistor is made sufficiently small so as to allow the EEPROM cells to accommodate the bit line pitch of the Flash cell, which facilitates combining the two memories into memory banks containing both cells. The EEPROM cells are erased by byte while the Flash cells erased by block. The small select transistor has a small channel length and width, which is compensated by increasing gate voltages on the select transistor and pre-charge bitline during CHE program operation.
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Co-pending U.S. Appl. No. 09/891,782, filed Jun. 27, 2001, “A Novel 3-Step Write Operation Nonvolatile Semiconductor One-Transistor Flash EEPROM Memory”, Assigned to the Same Assignee as the Present Invention.
Hsu Fu-Chang
Lee Peter W.
Ma Han-Rei
Tsao Hsing-Ya
Ackerman Stephen B.
Aplus Flash Technology Inc.
Phung Anh
Saile Ackerman LLC
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